| 1. | Deposition temperature and surface microstructures zro
2薄膜结构及表面形貌的影响 |
| 2. | Introduction of fe nanoparticles as catalyst effectively decrease the deposition temperature of sic nanowries , and promote sic nanowries growth
纳米铁粒子引入有效得降低了sic的合成温度，并促使了sic纳米线的生长。 |
| 3. | The main process parameters include hydrogen content in the gas sources , hydrogen plasma catalyst pretreatment , substrate bias , deposition temperature and plasma flow guiding
主要之制程参数包括气源中之氢气含量、氢电浆前处理、基材偏压、沉积温度以及电浆导流板之施加。 |
| 4. | The effect of many factors on the growth of thin films is especially analyzed and generalized , such as surface topography , structure defect of substrate , deposition temperature , and so on
特别对基底的表面形貌、结构缺陷、沉积温度等因素对薄膜生长影响的蒙特卡罗方法模拟的研究进展进行了分析和归纳。 |
| 5. | That is to say , in order to achieve transformation from nonmagnetic fcc phase structure to fct state with strong anti - ferromagnetism , a high post - deposition temperature ( about 260 c ) anneal must be performed
也就是说，为了使其从非磁fcc相转变为具有强反铁磁的fct相结构，需要大约260的高温退火才能实现。 |
| 6. | It was found that the thin films and target were of similar composition . the optimal deposition temperature was 150 - 200 and the tcr of thin films were strongly influenced by the target temperature
发现磁控溅射法可以沉积得到与靶材组分一致的锰铜薄膜，沉积的最佳温度为150 200 ’ c ，并且阴极靶的温度对薄膜tcr有很大的影响。 |
| 7. | The results turned out that the crystal structure was changed by the variation of the deposition temperature and annealing time . the surface morphology was greatly influenced by the spray parameters which atomized the precursor droplet in different diameters and different intensities
薄膜的表面形貌随着喷雾参数的改变发生了较大的改变，喷雾参数的改变使是雾化液滴大小和液流密度随之发生了一定改变。 |
| 8. | The influence of sinx deposited by pecvd in different condition , especially changing deposition temperature , on the gaas surface after sulfur passivation is measured by sims analysis combined with the test for direct current breakdown characteristics
用sims分析结合器件直流特性测试，比较了在不同条件下淀积的氮化硅对gaas硫钝化表面的作用，特别是淀积温度分别为80 、 80 / 230 、 230时对硫钝化效果的影响。 |
| 9. | The crystal grain boundary of v2o5 films was melted and disappeared as increasing the deposition temperature , and the crystalline v2o5 films can be obtained by deposition at > 300 . these films showed excellent cathode and anodic electrochromic performance at different wavelength region
而衬底温度升高促进薄膜晶体颗粒长大、熔结，晶粒边界消失，在较高衬底温度( 300 400 ) ，得到连续的结晶性能良好的v _ 2o _ 5薄膜。 |
| 10. | The thin film a - si : h solar cells compared with crystal silicon solar cells have advantages as following : 1 ) the fabrication technology of a - si : h solar cells is simple . 2 ) the low deposition temperature , the low cost of material and the cheap substrate make the low cost of a - si : h solar cells
非晶硅薄膜太阳电池与晶硅太阳电池相比有如下优点，制作工艺简单；衬底温度低，耗材少，能沉积在廉价的衬底上，故成本低，能容易的应用集成工艺，进一步降低成本。 |
